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industrial & multimarket data sheet rev. 2.0, 2011-03-15 final coolmos c6 650v coolmos? c6 power transistor IPW65R070C6 mosfet metal oxide semiconductor field effect transistor
drain pin 2 gate pin 1 source pin 3 650v coolmos? c6 power transistor IPW65R070C6 final data sheet 2 rev. 2.0, 2011-03-15 1 description coolmos? is a revolutionary technology for high voltage power mosfets, designed according to the superjunction (sj) principle and pioneered by infineon technologies. coolmos? c6 series comb ines the experience of the leading sj mosfet supplier with high class innovation. the offered devices provide all benefits of a fast switching sj mosf et while not sacrificing ease of use. extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. features ? extremely low losses due to very low fom r dson *q g and e oss ? very high commutation ruggedness ? easy to use/drive ? qualified for industrial grade applications according to jedec 1) ? pb-free plating, halogen free mold compound applications pfc stages, hard switching pwm stages and resonant switching pwm stages for e.g. pc silverbox, lcd & pdp tv, light ing, server, teleco m, ups and solar. please note: for mosfet paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) j-std20 and jesd22 table 1 key performance parameters parameter value unit related links v ds @ t j,max 700 v ifx coolmos webpage r ds(on),max 0.07 ? ifx design tools q g,typ 170 nc i d,pulse 150 a e oss @ 400v 13 j body diode d i /d t 300 a/s type package marking IPW65R070C6 pg-to247 65c6070
650v coolmos? c6 power transistor IPW65R070C6 table of contents final data sheet 3 rev. 2.0, 2011-03-15 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table of contents
650v coolmos? c6 power transistor IPW65R070C6 maximum ratings final data sheet 4 rev. 2.0, 2011-03-15 2 maximum ratings at t j = 25 c, unless otherwise specified. 3 thermal characteristics table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current 1) 1) limited by t j,max. maximum duty cycle d=0.75 i d --53.5 a t c = 25 c 33.8 t c = 100c pulsed drain current 2) 2) pulse width t p limited by t j,max i d,pulse --150 a t c =25 c avalanche energy, single pulse e as - - 1160 mj i d =9.3 a, v dd =50 v avalanche energy, repetitive e ar - - 1.76 i d =9.3 a, v dd =50 v avalanche current, repetitive i ar --9.3 a mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480 v gate source voltage v gs -20 - 20 v static -30 30 ac (f>1 hz) power dissipation p tot --391 w t c =25 c operating and storage temperature t j , t stg -55 - 150 c mounting torque - - 60 ncm m3 and m3.5 screws continuous diode forward current i s --46.3 a t c =25 c diode pulse current 2) i s,pulse --150 a t c =25 c reverse diode dv/dt 3) 3) identical low side and high side switch with identical r g ; v peak < v (br)dss ; t j < t j.max dv/dt - - 15 v/ns v ds =0...400 v, i sd ? i d , t j =25 c maximum diode commutation speed 3) di f /dt - - 300 a/s table 3 thermal characteristics to-247 parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - - 0.32 c/w thermal resistance, junction - ambient r thja - - 62 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s
650v coolmos? c6 power transistor IPW65R070C6 electrical characteristics final data sheet 5 rev. 2.0, 2011-03-15 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified. table 4 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 650 - - v v gs =0 v, i d =1.0 ma gate threshold voltage v gs(th) 2.5 3 3.5 v ds = v gs , i d =1.76 ma zero gate voltage drain current i dss -- 1a v ds =650 v, v gs =0 v, t j =25 c -50- v ds =650 v, v gs =0 v, t j =150 c gate-source leakage current i gss - - 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) - 0.063 0.07 ? v gs =10 v, i d =17.6 a, t j =25 c -0.164- v gs =10 v, i d =17.6 a, t j =150 c gate resistance r g -0.85- ? f =1 mhz, open drain table 5 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss -3900- pf v gs =0 v, v ds =100 v, f =1 mhz output capacitance c oss -215- effective output capacitance, energy related 1) 1) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss c o(er) -140- v gs =0 v, v ds =0...480 v effective output capacitance, time related 2) 2) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss c o(tr) -670- i d =constant, v gs =0 v v ds =0...480v turn-on delay time t d(on) -17- ns v dd =400 v, v gs =13 v, i d =26.3 a, r g =1.8 ? rise time t r -17- turn-off delay time t d(off) -90- fall time t f -6-
650v coolmos? c6 power transistor IPW65R070C6 electrical characteristics final data sheet 6 rev. 2.0, 2011-03-15 table 6 gate charge characteristics parameter symbol values unit note / test condition min. typ. max. gate to source charge q gs -20- nc v dd =480 v, i d =26.3 a, v gs =0 to 10 v gate to drain charge q gd -85- gate charge total q g -170- gate plateau voltage v plateau -5.5- v table 7 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode forward voltage v sd -0.9- v v gs =0 v, i f =26.3 a, t j =25 c reverse recovery time t rr -730- ns v r =400 v, i f =26.3 a, d i f /d t =100 a/s reverse reco very charge q rr -19- c peak reverse recovery current i rrm -50- a
650v coolmos? c6 power transistor IPW65R070C6 electrical characteristics diagrams final data sheet 7 rev. 2.0, 2011-03-15 5 electrical characteristics diagrams table 8 power dissipation max. transient thermal impedance p tot = f( t c ) z (thjc) =f(tp); parameter: d=t p / t table 9 safe operating area t c =25 c safe operating area t c =80 c i d =f(v ds ); t c =25 c; v gs > 7v; d=0; parameter t p i d =f(v ds ); t c =80c; v gs > 7v; d=0; parameter t p
650v coolmos? c6 power transistor IPW65R070C6 electrical characteristics diagrams final data sheet 8 rev. 2.0, 2011-03-15 table 10 typ. output characteristics t j =25 c typ. output characteristics t j =125 c i d =f( v ds ); t j =25 c; parameter: v gs i d =f( v ds ); t j =125 c; parameter: v gs table 11 typ. drain-source on-state resistance drain-source on-state resistance r ds(on) =f( i d ); t j =125 c; parameter: v gs r ds(on) =f( t j ); i d =17.6 a; v gs =10 v
650v coolmos? c6 power transistor IPW65R070C6 electrical characteristics diagrams final data sheet 9 rev. 2.0, 2011-03-15 table 12 typ. transfer characteristics typ. gate charge i d =f( v gs ); v ds =20v v gs =f( q gate ), i d =26.3 a pulsed table 13 avalanche energy drain-source breakdown voltage e as =f( t j ); i d =9.3 a; v dd =50 v v br(dss) =f( t j ); i d =1.0 ma
650v coolmos? c6 power transistor IPW65R070C6 electrical characteristics diagrams final data sheet 10 rev. 2.0, 2011-03-15 table 14 typ. capacitances typ. c oss stored energy c=f( v ds ); v gs =0 v; f =1 mhz e oss =f( v ds ) table 15 forward characteristics of reverse diode i f =f( v sd ); parameter: t j
650v coolmos? c6 power transistor IPW65R070C6 package outlines final data sheet 11 rev. 2.0, 2011-03-15 6 package outlines figure 1 outlines to-247, dimensions in mm/inches
650v coolmos? c6 power transistor IPW65R070C6 revision history final data sheet 12 rev. 2.0, 2011-03-15 7 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2011-03-15 published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. with respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including wit hout limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for in formation on the types in question, please contact the neares t infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applicat ions or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protec t human life. if they fail, it is reason able to assume that the health of the user or other persons may be endangered. revision history: 2011-03-15, rev. 2.0 previous revision: revision subjects (major ch anges since last revision) 2.0 release of final data sheet

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